Optimizing CNTFET design parameters using Taguchi method for high performance and low power applications
نویسندگان
چکیده
The features of CNT (Nanotube Carbon) are fascinating to study due their unique structural and electrical capabilities. small structure the in Field-Effect Transistor technology can produce a smaller device with better performance. In this work, Taguchi method had been implemented optimize Carbon Nanotube (CNTFET). Minitab 19 software used carry out analysis. Three design parameters (diameter CNT, pitch number CNT) three different sizes each chosen improve CNTFET L27 orthogonal array signal-to-noise (SNR) was collect analyze data. result from validated by using ANOVA. analysis results displayed best combination that optimum performance terms high power low application. showed most dominant parameter affects CNTFET’s current characteristics is diameter 59.93%, 96.15% 99.14% towards on-current (Ion), off-current (Ioff) ratio (Ion/Ioff), respectively. By identifying CNTFET, be further optimized. Eventually, devices application enhanced.
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ژورنال
عنوان ژورنال: Ma?allat? al-ab?a?t? al-handasiyyat?
سال: 2022
ISSN: ['2307-1877', '2307-1885']
DOI: https://doi.org/10.36909/jer.14155